cystech electronics corp. spec. no. : c130fp issued date : 2016.03.15 revised date : page no. : 1/9 MTN12N60CFP cystek product specification n-channel enhancement mode power mosfet MTN12N60CFP bv dss 600v i d @ v gs =10v, t c =25 c 12a r dson(typ) @ v gs =10v, i d =6a 0.49 description the MTN12N60CFP is a n-channel enhancement-mode mosfet, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. the to-220fp package is universally preferred for all commercial-industrial applications features ? low on resistance ? simple drive requirement ? low gate charge ? fast switching characteristic ? insulating package, front/back side insulating voltage=2500v(ac) ? rohs compliant package applications ? ballast ? inverter ordering information device package shipping MTN12N60CFP-0-ub-s to-220fp (rohs compliant package) 50 pcs/tube, 20 tubes/box, 4 boxes / carton environment friendly grade : s for rohs compliant products, g for rohs compliant and green compound products packing spec, ub : 50 pcs / tube, 20 tubes/box product rank, zero for no rank products product name
cystech electronics corp. spec. no. : c130fp issued date : 2016.03.15 revised date : page no. : 2/9 MTN12N60CFP cystek product specification symbol outline MTN12N60CFP to-220fp g d s g gate d drain ssource absolute maximum ratings (t c =25c) parameter symbol limits unit drain-source voltage (note 1) v ds 600 gate-source voltage v gs 30 v continuous drain current @t c =100 c, v gs =10v 12* continuous drain current @t c =100 c, v gs =10v i d 7.4* pulsed drain current @ v gs =10v (note 2) i dm 48* avalanche current (note 2) i as 12 a single pulse avalanche energy@l=1mh, i as =12a, v dd =50v (note 3) e as 72 repetitive avalanche energy (note 2) e ar 6.3 mj maximum temperature for soldering @ lead at 0.125 in(3.175mm) from case for 10 seconds t l 300 c w total power dissipation (t c =25 ) linear derating factor above 25 p d 62.5 0.5 w/ c operating junction and storage temperature tj, tstg -55~+150 c * drain current limited by maximum junction temperature. note : 1 . t j =+25 to +150 . 2 . pulse width limited by maximum junction temperature. 3 . 100% tested by conditions of i as =6a, v dd =50v, l=2mh, v gs =10v, starting t j =+25 . thermal data parameter symbol value unit thermal resistance, junction-to-case, max r jc 2.0 thermal resistance, junction-to-ambient, max r ja 62.5 c/w
cystech electronics corp. spec. no. : c130fp issued date : 2016.03.15 revised date : page no. : 3/9 MTN12N60CFP cystek product specification characteristics (tj=25 c, unless otherwise specified) symbol min. typ. max. unit test conditions static bv dss 600 - - v v gs =0v, i d =250 a ? bv dss / ? tj - 0.8 - v/ c reference to 25 c, i d =250 a v gs(th) 2.0 - 4.0 v v ds = v gs , i d =250 a *g fs - 13 - s v ds =15v, i d =6a i gss - - 100 na v gs = 30v - - 1 v ds =600v, v gs =0v i dss - - 25 a v ds =480v, v gs =0v, tj=125 c *r ds(on) - 0.49 0.65 v gs =10v, i d =6a dynamic *qg - 62.6 93.9 *qgs - 11.5 - *qgd - 27.5 - nc i d =12a, v dd =480v, v gs =10v *t d(on) - 26.4 53 *tr - 48.6 97 *t d(off) - 182 273 *t f - 64.4 96 ns v dd =300v, i d =12a, v gs =10v, r g =25 ciss - 2180 3270 coss - 183 275 crss - 61 92 pf v gs =0v, v ds =25v, f=1mhz source-drain diode *i s - - 12 *i sm - - 48 a *v sd - 0.85 1.5 v i s =12a, v gs =0v *trr - 460 - ns *qrr - 4.3 - c v gs =0v, i f =12a, di f /dt=100a/ s *pulse test : pulse width 300 s, duty cycle 2%
cystech electronics corp. spec. no. : c130fp issued date : 2016.03.15 revised date : page no. : 4/9 MTN12N60CFP cystek product specification typical characteristics typical output characteristics 0 5 10 15 20 0 1020304050 v ds , drain-source voltage(v) i d , drain current(a) v gs =4.5v 5v 5.5 v 10v, 9v, 8v, 7v 6v static drain-source on-resistance vs ambient temperature 0 0.5 1 1.5 2 2.5 3 -75 -50 -25 0 25 50 75 100 125 150 175 t a , ambient temperature(c) r ds(on) , normalized static drain-source on-state resistance i d =6a, v gs =10v r ds( on) @ tj=25c : 0.49 typ. static drain-source on-state resistance vs drain current 0 0.2 0.4 0.6 0.8 1 0.1 1 10 100 i d , drain current(a) r ds(on) , static drain-source on-state resistance() v gs =10v drain current vs gate-source voltage 0 5 10 15 20 25 30 35 0246810 v gs , gate-source voltage(v) i d , drain current(a) ta=25c v ds =10v v ds =30v static drain-source on-state resistance vs gate-source voltage 0 0.5 1 1.5 2 0246810 v gs , gate-source voltage(v) r ds(on) , static drain-source on- state resistance() ta=25c i d =6a body diode forward voltage variation vs source current and temperature 0.001 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 v sd , source drain voltage(v) i dr , reverse drain current(a) v gs =0v ta=25c ta=150c
cystech electronics corp. spec. no. : c130fp issued date : 2016.03.15 revised date : page no. : 5/9 MTN12N60CFP cystek product specification typical characteristics (cont.) capacitance vs reverse voltage 10 100 1000 10000 0 5 10 15 20 25 30 v sd , drain-to-source voltage(v) capacitance(pf) ciss coss crss f=1mhz brekdown voltage vs ambient temperature 0.6 0.7 0.8 0.9 1 1.1 1.2 -75 -50 -25 0 25 50 75 100 125 150 175 t j , junction temperature(c) bv dss , normalized drain-source breakdown voltage i d =250 a, v gs =0v maximum safe operating area 0.01 0.1 1 10 100 1 10 100 1000 vd s , drain-source voltage(v) i d , drain current(a) o p eration in this area is limited by r ds( on) dc 10ms 100ms 1ms 100 s 10 s tc=25c, tj=150c,v gs =10v r jc =2c/w, single pulse gate charge characteristics 0 2 4 6 8 10 0 8 16 24 32 40 48 56 64 72 80 qg, total gate charge(nc) v gs , gate-source voltage(v) i d =12a v ds =160v v ds =300v v ds =480v maximum drain current vs case temperature 0 2 4 6 8 10 12 14 25 50 75 100 125 150 175 t c , case temperature(c) i d , maximum drain current (a) v gs =10v, r jc =2c/w threshold voltage vs junction tempearture 0.4 0.6 0.8 1 1.2 1.4 -65 -35 -5 25 55 85 115 145 175 tj, junction temperature(c) v gs(th) , normalized threshold voltage i d =250 a i d =1ma
cystech electronics corp. spec. no. : c130fp issued date : 2016.03.15 revised date : page no. : 6/9 MTN12N60CFP cystek product specification typical characteristics (cont.) forward transfer admittance vs drain current 0.01 0.1 1 10 100 0.001 0.01 0.1 1 10 i d , drain current(a) g fs , forward transfer admittance(s) v ds =15v pulsed t c =25c single pulse power rating, junction to case 0 200 400 600 800 1000 1200 1400 1600 1800 2000 0.0001 0.001 0.01 0.1 1 10 pulse width(s) power (w) t j(max) =150c t c =25c r jc =2c/w transient thermal response curves 0.001 0.01 0.1 1 1.e-05 1.e-04 1.e-03 1.e-02 1.e-01 1.e+00 1.e+01 t 1 , square wave pulse duration(s) r (t), normalized effective transient thermal resistance single pulse 0.01 0.02 0.05 0.1 0.2 d=0.5 1.r jc (t)=r(t)*r jc 2.duty factor, d=t 1 /t 2 3.t jm -t c =p dm *r jc (t) 4.r jc =2 c/w
cystech electronics corp. spec. no. : c130fp issued date : 2016.03.15 revised date : page no. : 7/9 MTN12N60CFP cystek product specification test circuit and waveforms
cystech electronics corp. spec. no. : c130fp issued date : 2016.03.15 revised date : page no. : 8/9 MTN12N60CFP cystek product specification test circuit and waveforms(cont.)
cystech electronics corp. spec. no. : c130fp issued date : 2016.03.15 revised date : page no. : 9/9 MTN12N60CFP cystek product specification to-220fp dimension *typical inches millimeters inches millimeters dim min. max. min. max. marking: date code device name style: pin 1.gate 2.drain 3.source 3-lead to-220fp plastic package cystek package code: fp dim min. max. min. max. a 0.171 0.183 4.35 4.65 g 0.246 0.258 6.25 6.55 a1 0.051 ref 1.300 ref h 0.138 ref 3.50 ref a2 0.112 0.124 2.85 3.15 h1 0.055 ref 1.40 ref a3 0.102 0.110 2.60 2.80 h2 0.256 0.272 6.50 6.90 b 0.020 0.030 0.50 0.75 j 0.031 ref 0.80 ref b1 0.031 0.041 0.80 1.05 k 0.020 0.50 ref b2 0.047 ref 1.20 ref l 1.102 1.118 28.00 28.40 c 0.020 0.030 0.500 0.750 l1 0.043 0.051 1.10 1.30 d 0.396 0.404 10.06 10.26 l2 0.036 0.043 0.92 1.08 e 0.583 0.598 14.80 15.20 m 0.067 ref 1.70 ref e 0.100 * 2.54* n 0.012 ref 0.30 ref f 0.106 ref 2.70 ref notes: 1.controlling dimension: millimeters. 2.maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing spec ification or packing method, please cont act your local cystek sales office. material: ? lead: pure tin plated. ? mold compound: epoxy resin family, flammability solid burning class: ul94v-0. important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of cystek. ? cystek reserves the right to make changes to its products without notice. ? cystek semiconductor products are not warranted to be suitab le for use in life-support applications, or systems. ? cystek assumes no liability for any consequence of customer pr oduct design, infringement of pat ents, or application assistance .
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